首页> 外文OA文献 >Influences of deposition and crystallization kinetics on the properties of silicon films deposited by low-pressure chemical vapour deposition from silane and disilane

【2h】

Influences of deposition and crystallization kinetics on the properties of silicon films deposited by low-pressure chemical vapour deposition from silane and disilane

机译：沉积和结晶动力学对通过硅烷和乙硅烷的低压化学气相沉积法沉积的硅膜性能的影响

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

摘要
著录项
引文网络
相似文献
相关主题

摘要

International audience

机译：国际观众

著录项

作者
Temple-Boyer, Pierre; Rousset, Bernard; Scheid, Emmanuel;
展开▼
作者单位

展开▼
年度 2010
总页数
原文格式 PDF
正文语种 en
中图分类

相似文献

外文文献
中文文献
专利

1. Influences of deposition and crystallization kinetics on the properties of silicon films deposited by low-pressure chemical vapour deposition from silane and disilane [J] . Pierre Temple-Boyer, B. Rousset, E. Scheid Thin Solid Films . 2010,第23期

机译：沉积和结晶动力学对通过硅烷和乙硅烷的低压化学气相沉积法沉积的硅膜性能的影响
2. Influence of dopant concentration and type of substrate on the local organization of low-pressure chemical vapour deposition in situ boron doped silicon films from silane and boron trichloride [J] . B. Caussat, E. Scheid, B. de Mauduit, Thin Solid Films . 2004,第2期

机译：掺杂剂浓度和衬底类型对低压化学气相沉积硅烷和三氯化硼原位掺硼硅薄膜局部组织的影响
3. Properties of nitrogen doped silicon films deposited by low pressure chemical vapour deposition from disilane and ammonia [J] . P. Temple-Boyer, L. Jalabert, E. Couderc Thin Solid Films . 2002,第1期

机译：低压化学气相沉积由乙硅烷和氨沉积的氮掺杂硅膜的性能
4. Silicon Films Deposited by Low-Pressure Chemical Vapour Deposition for Microsystems [C] . H. Mahfoz-Kotb, A.C. Salauen, T. Mohammed-Brahim, International semiconductors conference . 2003

机译：通过低压化学气相沉积微系统沉积的硅膜
5. Selective chemical vapor deposition of heavily boron doped silicon-germanium films from disilane, germane and chlorine for source/drain junctions of nanoscale CMOS. [D] . Pesovic, Nemanja. 2002

机译：从乙硅烷，锗烷和氯中重掺杂硼的硅锗薄膜的选择性化学气相沉积，用于纳米级CMOS的源/漏结。
6. Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Films [O] . Mateusz Œmietana, Robert Mroczyński, Norbert Kwietniewski 2014

机译：射频等离子体增强化学气相沉积（RF PECVD）反应器中样品高度对氮化硅薄膜光学性能和沉积速率的影响
7. Influences of deposition and crystallization kinetics on the properties of silicon films deposited by low-pressure chemical vapour deposition from silane and disilane [O] . Temple-Boyer, Pierre, Rousset, Bernard, Scheid, Emmanuel 2010

机译：沉积和结晶动力学对硅烷和乙硅烷低压化学气相沉积法沉积硅膜性能的影响
8. Influence of Substrate Temperature and Hydrogen Dilution Ratio on the Properties of Nanocrystalline Silicon Thin Films Grown by Hot-Wire Chemical Vapor Deposition [R] . Moutinho, H. R., Jiang, C. S., Nelson, B., 2003

机译：衬底温度和氢稀释比对热线化学气相沉积法生长纳米硅薄膜性能的影响

Influences of deposition and crystallization kinetics on the properties of silicon films deposited by low-pressure chemical vapour deposition from silane and disilane

摘要

著录项

引文网络

相似文献

相关主题

期刊订阅